Nanosecond-Timescale Low Energy Switching of In-Plane Magnetic Tunnel Junctions through Dynamic Oersted-Field-Assisted Spin Hall Effect.

Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory

Single-shot time-domain studies of spin-torque-driven switching in magnetic tunnel junctions.

We report single-shot measurements of resistance versus time for thermally assisted spin-torque switching in magnetic tunnel junctions. We achieve the sensitivity to resolve the magnetic dynamics prior to as well as during switching, yielding detailed views of switching modes and variations between events. Analyses of individual traces allow measurements of coherence times, nonequilibrium excit...

Beta (β) tungsten thin films: Structure, electron transport, and giant spin Hall effect

Articles you may be interested in Spin Hall switching of the magnetization in Ta/TbFeCo structures with bulk perpendicular anisotropy Appl. Reducing spin-torque switching current by incorporating an ultra-thin Ta layer with CoFeB free layer in magnetic tunnel junctions Appl. Enhancement of perpendicular magnetic anisotropy and transmission of spin-Hall-effect-induced spin currents by a Hf space...

High TMR and Low RA in Mg-B-O and Ni-Fe-B Nanopillar Fabrication for Spin-Torque Switching

Spin-torque transfer-induced magnetization switching has many applications, such as spin-torque magnetic random access memory (ST-MRAM) and has potential applications for tunable microwave oscillators at the gigahertz (GHz) range. Magnesium oxide (MgO)-based magnetic tunnel junctions for ST-MRAM especially attract great attention due to their high tunneling magnetoresistance (TMR) at room tempe...

Origin of easy magnetization switching in magnetic tunnel junctions with voltage-controlled interfacial anisotropy

Spin-polarized currents represent an efficient tool for manipulating ferromagnetic nanostructures but the critical current density necessary for the magnetization switching is usually too high for applications. Here we show theoretically that, in magnetic tunnel junctions having electric-field-dependent interfacial anisotropy, the critical density may reduce down to a very low level (~10(4) A c...